English
Language : 

MBR30H90PT_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common Cathode High Voltage Schottky Rectifier
www.vishay.com
MBR30H90PT, MBR30H100PT
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
90 V, 100 V
IFSM
265 A
VF
0.67 V
IR
5.0 μA
TJ max.
Package
175 °C
TO-247AD (TO-3P)
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse surge current at tp = 2 μs, 1 kHz 
per diode
IRRM
Non-repetitve avalanche energy (IAS = 0.5 A, L = 60 mH)
per diode
EAS
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
MBR30H90PT MBR30H100PT
90
100
90
100
90
100
30
15
265
1.0
7.5
10 000
- 65 to + 175
UNIT
V
V
V
A
A
A
mJ
V/μs
°C
Revision: 09-Aug-13
1
Document Number: 88678
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000