MBR30H90 Datasheet, PDF (1/2 Pages) Vishay Siliconix – High-Voltage Dual Schottky Rectifiers

MBR30H90PT & MBR30H100PT
New Product
Vishay Semiconductors
formerly General Semiconductor
High-Voltage Dual Schottky Rectifiers
0.245 (6.2)
0.225 (5.7)
0.840 (21.3)
0.820 (20.8)
TO-247AD
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30
0.170
(4.3)
0.142 (3.6)
0.138 (3.5)
10 TYP.
BOTH SIDES
1
2
3
0.086 (2.18)
0.076 (1.93)
0.078 REF
(1.98)
10 °
1 REF.
BOTH
SIDES
Features
Reverse Voltage 90 to 100V
Forward Current 30A
• Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
• Dual rectifier construction, positive center-tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• High current capability, low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free-wheeling, and polarity protection applications
• Guardring for overvoltage protection
Mechanical Data
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.127 (3.22)
0.117 (2.97)
PIN 1
PIN 3
0.118 (3.0)
0.108 (2.7)
PIN 2
CASE
Dimensions
in inches and
(millimeters)
Case: JEDEC TO-247AD molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3mm) from case
Polarity: As marked
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
Mounting Position: Any Mounting Torque: 10 in-lbs max.
Weight: 0.2 oz., 5.6 g
Maximum Ratings & Thermal Characteristics Ratings per leg at TA = 25°C unless otherwise specified.
Parameter
Symbol MBR30H90PT MBR30H100PT
Unit
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
Total device
Per leg
IF(AV)
30
15
A
Peak repetitive forward current per leg at TC=105°C
(rated VR, square wave, 20 KHZ)
IFRM
30
A
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
265
A
Peak repetitive reverse surge current at tp = 2µs, f = 1kHz
IRRM
1.0
A
Non-repetitive avalanche energy (IAS = 0.5A, L = 60mH)
EAS
7.5
mJ
Voltage rate of change at (rated VR)
dv/dt
10,000
V/µs
Thermal resistance from junction to case per leg
RθJC
1.6
°C/W
Operating junction and storage temperature range
TJ
–65 to +175
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol MBR30H90PT MBR30H100PT
Maximum instantaneous
IF = 15A, TJ = 25°C
forward voltage per leg at: ⁽¹⁾
IF = 15A, TJ = 125°C
IF = 30A, TJ = 25°C
VF
IF = 30A, TJ = 125°C
0.82
0.67
0.93
0.80
Maximum instantaneous reverse current at
rated DC blocking voltage per leg ⁽¹⁾
TJ = 25°C
TJ = 125°C
IR
5.0
6.0
Note: (1) Pulse test: 300µs pulse width, 1% duty cycle
Unit
V
µA
mA
Document Number 88678
02-Jul-02
www.vishay.com
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