MBR30H35PT_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
30 A
V_RRM
35 V, 45 V, 50 V, 60 V
I_FSM
200 A
V_F
0.58 V, 0.63 V
I_R
150 μA
T_J max.
Package
175 °C
TO-247AD
Diode variations
Dual Common Cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT
Maximum repetitive peak reverse voltage
V_RRM
35
Maximum working peak reverse voltage
V_RWM
35
Maximum DC blocking voltage
V_DC
35
Maximum average forward rectified current (fig. 1)
I_F(AV)
Non-repetitive avalanche energy per diode at 25 °C,
I_AS = 1.5 A, L = 10 mH
E_AS
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
45
50
45
50
45
50
30
80
200
60
V
60
V
60
V
A
mJ
A
Peak repetitive reverse surge current per diode
I_RRM ⁽¹⁾
2.0
Peak non-repetitive reverse energy (8/20 μs waveform) E_RSM
30
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 
V_C
1.0
A
20
mJ
mJ
Voltage rate of change (rated V_R)
Operating junction temperature range
Storage temperature range
dV/dt
T_J
T_STG
10 000
- 65 to + 175
- 65 to + 175
V/μs
°C
°C
Note
(1) _{2.0 μs pulse width, f = 1.0 kHz}
Revision: 13-Aug-13
1
Document Number: 88792
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000