MBR3035WT Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 15 A

MBR3035WT/MBR3045WT
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
TO-247AC
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
2 x 15 A
35/45 V
100 mA at 125 °C
FEATURES
• 150 °C T_J operation
• Center tap TO-247 package
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
DESCRIPTION
The MBR30..WT center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform (per device)
I_FRM
V_RRM
T_C = 125 °C (per leg)
I_FSM
t_p = 5 µs sine
V_F
20 Apk, T_J = 125 °C
T_J
Range
VALUES
30
30
35/45
1020
0.60
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
MBR3035WT
35
MBR3045WT
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Peak repetitive forward current per leg
I_FRM
Non-repetitive peak surge current
I_FSM
Peak repetitive reverse surge current
I_RRM
TEST CONDITIONS
T_C = 125 °C, rated V_R
Rated V_R, square wave, 20 kHz T_C = 125 °C
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated
V_RRM applied
Surge applied at rated load conditions half wave,
single phase, 60 Hz
2.0 µs 1.0 kHz
VALUES
15
30
30
1020
200
2.0
UNITS
A
Document Number: 93448
Revision: 21-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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