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MBR3035PT_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier
MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V, 45 V, 50 V, 60 V
IFSM
200 A
VF
0.60 V, 0.65 V
TJ max.
Package
150 °C
TO-247AD (TO-3P)
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Maximum working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current (fig. 1)
IF(AV)
30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
Peak repetitive reverse surge current at tp = 2 μs, 1 kHz 
per diode
IRRM (1)
2.0
1.0
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
TSTG
10 000
-65 to +150
-65 to +175
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
UNIT
V
V
V
A
A
A
V/μs
°C
°C
Revision: 17-Aug-15
1
Document Number: 88676
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000