MBR3035PT Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Rectifiers

MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
30 A
35 V to 60 V
200 A
0.60 V, 0.65 V
150 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
Maximum working peak reverse voltage
V_RWM
35
45
50
60
Maximum DC blocking voltage
V_DC
35
45
50
60
Maximum average forward rectified current (Fig. 1)
I_F(AV)
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
200
Peak repetitive reverse surge current per diode ⁽¹⁾
Voltage rate of change at (rated V_R)
Operating junction temperature range
Storage temperature range
I_RRM
dV/dt
T_J
T_STG
2.0
1.0
10 000
- 65 to + 150
- 65 to + 175
Note:
(1) 2.0 µs pulse width, f = 1.0 kHz
UNIT
V
V
V
A
A
A
V/µs
°C
°C
Document Number: 88676 For technical questions within your region, please contact one of the following:
Revision: 07-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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