MBR25HXXCT_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR25HxxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
MBRF25HxxCT
123
PIN 1
PIN 2
PIN 3
2
1
MBRB25HxxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 15 A
V_RRM
35 V to 60 V
I_FSM
150 A
V_F
0.54 V, 0.60 V
I_R
100 μA
T_J max.
Package
175 °C
TO-220AB, ITO-220AB, TO-263AB
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT
Maximum repetitive peak reverse voltage
V_RRM
35
Working peak reverse voltage
V_RWM
35
Maximum DC blocking voltage
V_DC
35
Max. average forward
rectified current (fig. 1)
total device
per diode
I_F(AV)
45
50
45
50
45
50
30
15
60
60
V
60
A
Non-repetitive avalanche energy per diode
at 25 °C, I_AS = 4 A, L = 10 mH
E_AS
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
80
mJ
150
A
Peak repetitive reverse surge current per diode
at t_p = 2.0 μs, 1 kHz
I_RRM
1.0
Peak non-repetitive reverse energy
(8/20 μs waveform)
E_RSM
25
0.5
A
20
mJ
Revision: 12-Jun-13
1
Document Number: 88789
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000