MBR2535CT_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

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MBR25xxCT, MBRF25xxCT, MBRB25xxCT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR25xxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF25xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB25xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
Package
2 x 12.5 A
35 V to 60 V
150 A
0.73 V at 30 A, 0.65 V at 15 A
150 °C
TO-220AB, ITO-220AB, TO-263AB
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Maximum repetitive peak reverse voltage
V_RRM
35
Working peak reverse voltage
V_RWM
35
Maximum DC blocking voltage
V_DC
35
Maximum average forward rectified current  ^{total device}
at T_C = 130 °C
per diode
I_F(AV)
45
50
45
50
45
50
25
12.5
60
60
V
60
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current per diode
at t_p = 2 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode
I_FSM
I_RRM
E_RSM
150
A
1.0
0.5
25
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
V_C
25
kV
Voltage rate of change (rated V_R)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only) from terminal to
heatsink t = 1 min
dV/dt
T_J
T_STG
V_AC
10 000
-65 to +150
-65 to +175
1500
V/μs
°C
V
Revision: 08-Jan-15
1
Document Number: 88675
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000