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MBR2535CT_10 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 25.0 AMPS. Schottky Barrier Rectifiers
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR25xxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF25xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB25xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.73 V at 30 A, 0.65 V at 15 A
TJ max.
150 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB
package)
• Complant to RoHS 2002/95/EC and in accordance to
WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Maximum repetitive peak reverse voltage
VRRM
35
Working peak reverse voltage
VRWM
35
Maximum DC blocking voltage
VDC
35
Maximum average forward rectified current
at TC = 130 °C
total device
per diode
IF(AV)
45
50
45
50
45
50
30
15
60
60
V
60
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current per diode
at tp = 2 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode
IFSM
IRRM
ERSM
150
A
1.0
0.5
25
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 kΩ
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Document Number: 88675 For technical questions within your region, please contact one of the following:
Revision: 15-Jun-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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