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MBR20XXCT_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier
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MBR20xxCT, MBRF20xxCT, MBRB20xxCT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR20xxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF20xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB20xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2 x 10 A
35 V to 60 V
150 A
0.57 V, 0.70 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Dual Common Cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR2035CT MBR2045CT MBR2050CT MBR2060CT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current  total device
at TC = 135 °C
per diode
IF(AV)
20
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode 
at tp = 2.0 μs, 1 kHz
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ
TSTG
VAC
1.0
0.5
10 000
- 65 to + 150
- 65 to + 175
1500
UNIT
V
A
V/μs
°C
V
Revision: 20-Jan-14
1
Document Number: 88674
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000