MBR20XXCT Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – Dual Schottky Barrier Rectifiers

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MBR20xxCT, MBRF20xxCT, MBRB20xxCT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR20xxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF20xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB20xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
Package
2 x 10 A
35 V to 60 V
150 A
0.57 V, 0.70 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Dual common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR2035CT
MBR2045CT
Maximum repetitive peak reverse voltage
V_RRM
35
45
Working peak reverse voltage
V_RWM
35
45
Maximum DC blocking voltage
V_DC
35
45
Maximum average forward rectified current  ^{total device}
at T_C = 135 °C
per diode
I_F(AV)
20
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
150
Peak repetitive reverse surge current per diode 
at t_p = 2.0 μs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
I_RRM
dV/dt
T_J
T_STG
V_AC
1.0
10 000
-65 to +150
-65 to +175
1500
MBR2060CT
60
60
60
0.5
UNIT
V
A
V/μs
°C
V
Revision: 21-Nov-16
1
Document Number: 88674
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000