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MBR20H90CTG_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common Cathode High Voltage Schottky Rectifier | |||
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www.vishay.com
MBR20H90CTG, MBR20H100CTG
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
3
2
1
MBR20H90CTG
MBR20H100CTG
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.70 V
IR
3.5 μA
TJ max.
Package
175 °C
TO-220AB
Diode variations
Dual common cathode
FEATURES
⢠Power pack
⢠Guardring for overvoltage protection
⢠Lower power losses, high efficiency
⢠Low forward voltage drop
⢠Low leakage current
⢠High forward surge capability
⢠High frequency operation
⢠Solder dip 275 °C max., 10 s, per JESD 22-B106
⢠AEC-Q101 qualified availableï
- Automotive ordering code: base P/NHE3
⢠Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial gradeï
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102ï
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current TC = 150°C
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dV/dt
TJ, TSTG
MBR20H90CTG MBR20H100CTG
90
100
90
100
90
100
20
10
150
0.5
10 000
-65 to +175
UNIT
V
V
V
A
A
A
V/μs
°C
Revision: 03-Aug-15
1
Document Number: 88856
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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