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MBR20H90CT Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier
MBR(F,B)20H90CT & MBR(F,B)20H100CT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR20H90CT
MBR20H100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF20H90CT
MBRF20H100CT
PIN 1
PIN 2
PIN 3
2
1
MBRB20H90CT
MBRB20H100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF
TJ max.
10 A x 2
90 V, 100 V
250 A
4.5 µA
0.64 V
175 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ, TSTG
VAC
MBR20H90CT
MBR20H100CT
90
100
90
100
90
100
20
10
250
1.0
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
V/µs
°C
V
Document Number: 88673 For technical questions within your region, please contact one of the following:
Revision: 08-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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