MBR20H35CT Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common-Cathode Schottky Rectifier

New Product
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR20HxxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF20HxxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB20HxxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_J max.
10 A x 2
35 V to 60 V
150 A
0.55 V, 0.61 V
100 µA
175 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR20H35CT MBR20H45CT MBR20H50CT MBR20H60CT
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
Working peak reverse voltage
V_RWM
35
45
50
60
Maximum DC blocking voltage
V_DC
35
45
50
60
Max. average forward rectified
current (Fig. 1)
total device
per diode
I_F(AV)
20
10
Non-repetitive avalanche energy per diode at
25 °C, I_AS = 4 A, L = 10 mH
E_AS
80
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
150
Peak repetitive reverse surge current per diode at
t_p = 2.0 µs, 1 kHz
I_RRM
1.0
0.5
Peak non-repetitive reverse energy
(8/20 µs waveform)
E_RSM
20
10
UNIT
V
V
V
A
mJ
A
A
mJ
Document Number: 88787 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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