MBR20H200CT_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual Common Cathode High Voltage Schottky Rectifier

MBR20H200CT, MBRF20H200CT, SB20H200CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
ITO-220AB
123
MBR20H200CT
3
12
MBRF20H200CT
TO-262AA
1 ²³
SB20H200CT-1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
Package
2 x 10 A
200 V
290 A
0.75 V
175 °C
TO-220AB, ITO-220AB, TO-262AA
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, and TO-262AA 
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum



MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed 
on rated load per diode
Peak repetitive reverse current per diode at t_p = 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I_AS = 2.0 A, L = 10 mH
Electrostatic discharge capacitor voltage 
human body model air discharge: C = 100 pF, R = 1.5 k
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
I_RRM
E_RSM
E_AS
V_C
dV/dt
T_J, T_STG
V_AC
VALUE
200
200
200
20
10
290
1.0
20
20
25
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
kV
V/μs
°C
V
Revision: 12-Jun-13
1
Document Number: 88786
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000