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MBR20H150CT_15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual Common Cathode High Voltage Schottky Rectifier
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
ITO-220AB
1 23
MBR20H150CT
TO-262AA
3
12
MBRF20H150CT
SB20H150CT-1
PIN 1
PIN 2
PIN 3
CASE
1 23
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2 x 10 A
150 V
200 A
0.75 V
175 °C
TO-220AB, ITO-220AB,
TO-262AA
Diode variations
Dual Common Cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, and TO-262AA 
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum



MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR20H150CT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode 
at tp = 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode
(8/20 μs waveform)
IRRM
ERSM
Non-repetitive avalanche energy per diode at 25 °C,
IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to
heatsink t = 1 min
EAS
dV/dt
TJ, TSTG
VAC
MBRF20H150CT
150
150
150
20
10
200
1.0
10
11.25
10 000
- 65 to + 175
1500
SB20H150CT-1
UNIT
V
V
V
A
A
A
mJ
mJ
V/μs
°C
V
Revision: 13-Aug-13
1
Document Number: 88864
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000