MBR2090CT_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual Common-Cathode High Voltage

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High Voltage
Trench MOS Barrier Schottky Rectifier
TO-220AB
TMBS^®
ITO-220AB
MBR2090CT
MBR20100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
MBRF2090CT
MBRF20100CT
PIN 1
PIN 2
PIN 3
TO-263AB
K
123
2
1
MBRB2090CT
MBRB20100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
Package
2 x 10 A
90 V to 100 V
150 A
0.65 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variation
Common cathode
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum



MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
total device
Maximum average forward rectified current at T_C = 133 °C _{per diode}
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t_p = 2 μs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
E_AS
I_RRM
dV/dt
V_AC
T_J, T_STG
MBR2090CT MBR20100CT
90
100
90
100
90
100
20
10
150
130
0.5
10 000
1500
-65 to +150
UNIT
V
V
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Sep-13
1
Document Number: 89033
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000