MBR16H35 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Schottky Barrier Rectifier

MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AC
ITO-220AC
MBR16Hxx
PIN 1
PIN 2
CASE
2
1
TO-263AB
K
2
1
MBRF16Hxx
PIN 1
PIN 2
2
1
MBRB16Hxx
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_J max.
16 A
35 V to 60 V
150 A
0.56 V, 0.62 V
100 µA
175 °C
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR16H35 MBR16H45 MBR16H50 MBR16H60
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
Working peak reverse voltage
V_RWM
35
45
50
60
Maximum DC blocking voltage
V_DC
35
45
50
60
Max. average forward rectified current (Fig. 1)
I_F(AV)
16
Non-repetitive avalanche energy at 25 °C, I_AS = 4 A, L = 10 mH E_AS
80
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
150
Peak repetitive reverse surge current at t_p = 2.0 µs, 1 kHz
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
I_RRM
E_RSM
V_C
1.0
0.5
20
25
Voltage rate of change (rated V_R)
dV/dt
10 000
UNIT
V
V
V
A
mJ
A
A
mJ
kV
V/µs
Document Number: 88784 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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