MBR1645 Datasheet, PDF (1/6 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

MBR16.. Series
Vishay High Power Products
Schottky Rectifier, 16 A
Base
cathode
2
TO-220AC
1
3
Cathode Anode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at 16 A at 25 °C
I_RM
16 A
35/45 V
0.63 V
40 mA at 125 °C
FEATURES
• 150 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
DESCRIPTION
The MBR16.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 µs sine
V_F
16 Apk, T_J = 125 °C
T_J
Range
VALUES
16
35/45
1800
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V_R
V_RWM
MBR1635
35
MBR1645
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Non-repetitive peak surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
T_C = 134 °C, rated V_R
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated
V_RRM applied
Surge applied at rated load condition half wave
single phase, 60 Hz
T_J = 25 °C, I_AS = 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
16
1800
150
24
3.6
UNITS
A
A
mJ
A
Document Number: 93441
Revision: 22-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
1