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MBR1535CT_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 7.5 A
MBR15..CT Series
Vishay High Power Products
Schottky Rectifier, 2 x 7.5 A
Base 2
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
IF(AV)
VR
IRM
2 x 7.5 A
35/45 V
15 mA at 125 °C
FEATURES
• 150 °C TJ operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
DESCRIPTION
The MBR15..CT center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 µs sine
VF
7.5 Apk, TJ = 125 °C
TJ
Range
VALUES
15
35/45
690
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
MBR1535CT
35
MBR1545CT
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
TC = 131 °C, rated VR
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated
VRRM applied
Surge applied at rated load condition half wave
single phase 60 Hz
TJ = 25 °C, IAS = 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
7.5
15
690
150
7
2
UNITS
A
mJ
A
Document Number: 93440
Revision: 22-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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