MBR1100 Datasheet, PDF (1/5 Pages) ON Semiconductor – SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS

MBR1100
Vishay High Power Products
Schottky Rectifier, 1 A
DO-204AL
Cathode
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
1A
100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
1 Apk, T_J = 125 °C
T_J
Range
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The MBR1100 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
VALUES
1.0
100
200
0.68
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
MBR1100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 6
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 85 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 µs
Frequency limited by, T_J maximum V_A = 1.5 x V_R typical
VALUES
10
200
50
1.0
0.5
UNITS
A
mJ
A
Document Number: 93438
Revision: 06-Nov-08
For technical questions, contact: [e-mail]
www.vishay.com
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