MBR10XXX-E3_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
TO-220AC
TMBS^®
ITO-220AC
MBR1090
MBR10100
PIN 1
PIN 2
CASE
2
1
TO-263AB
K
2
1
MBRF1090
MBRF10100
PIN 1
PIN 2
2
1
MBRB1090
MBRB10100
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
Package
10 A
90 V, 100 V
150 A
0.65 V
150 °C
TO-220AC, ITO-220AC,
TO-263AB
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum



MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_C = 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH
Peak repetitive reverse current at t_p = 2 μs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
E_AS
I_RRM
dV/dt
V_AC
T_J, T_STG
MBR1090
90
90
90
MBR10100
100
100
100
10
150
130
0.5
10 000
1500
-65 to +150
UNIT
V
V
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Sep-13
1
Document Number: 89034
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000