MBR10H150CT_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier

MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
ITO-220AB
123
MBR10H150CT
123
MBRF10H150CT
TO-262AA
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
123
SB10H150CT-1
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
2x5A
150 V
160 A
0.72 V
175 °C
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum




MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig.1)
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 waveform)
Non-repetitve avalanche energy per diode at 25 °C, I_AS = 1.5 A, L = 10 mH
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
I_RRM
E_RSM
E_AS
dV/dt
T_J, T_STG
V_AC
MBR10H150CT
150
150
150
10
5
160
1.0
10
11.25
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
V/μs
°C
V
Revision: 21-Nov-12
1
Document Number: 88779
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000