MBR10H150CT_07 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier

MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
TO-220AB
ITO-220AB
123
MBR10H150CT
123
MBRF10H150CT
TO-262AA
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
123
SB10H150CT-1
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_j
2x5A
150 V
160 A
0.72 V
175 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, free-wheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (see Fig. 1)
Total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I_AS = 1.5 A, L = 10 mH
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
I_RRM
E_RSM
E_AS
dv/dt
T_J, T_STG
V_AC
Document Number: 88779
Revision: 27-Jul-07
MBR10H150CT
150
150
150
10
5
160
1.0
10
11.25
10000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
V/µs
°C
V
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