MBR1090_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High-Voltage Schottky Rectifier

MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
TO-220AC
TMBS^®
ITO-220AC
MBR1090
MBR10100
PIN 1
PIN 2
CASE
2
1
TO-263AB
K
2
MBRF1090 ¹
MBRF10100
PIN 1
PIN 2
2
1
MBRB1090
MBRB10100
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
10 A
90 V, 100 V
150 A
0.65 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 seconds (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, free-wheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_C = 133 °C
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Peak repetitive reverse current at t_p = 2 µs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
I_RRM
dv/dt
T_J, T_STG
V_AC
MBR1090 MBR10100
90
100
90
100
90
100
10
150
0.5
10000
- 65 to + 150
1500
UNIT
V
V
V
A
A
A
V/µs
°C
V
Document Number: 89034
Revision: 27-Aug-07
www.vishay.com
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