MBR1090-M3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

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MBR1090-M3, MBR10100-M3
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS^®
TO-220AC
PIN 1
PIN 2
2
1
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
10 A
V_RRM
90 V, 100 V
I_FSM
150 A
V_F
0.65 V
T_J max.
Package
Diode variations
150 °C
TO-220AC
Single die
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
V_RRM
V_RWM
V_DC
Maximum average forward rectified current at T_C = 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_F(AV)
I_FSM
dV/dt
T_J, T_STG
MBR1090
90
90
MBR10100
100
100
90
100
10
150
10 000
-65 to +150
UNIT
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage
Maximum reverse current per diode
at working peak reverse voltage
I_F = 10 A
I_F = 20 A
T_C = 25 °C
T_C = 125 °C
T_J = 25 °C
T_J = 100 °C
V_F ⁽¹⁾
I_R ⁽²⁾
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
VALUE
0.80
0.65
0.75
100
6.0
UNIT
V
μA
mA
Revision: 22-Dec-14
1
Document Number: 89193
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000