MBR1045 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 10 A

MBR10.. Series
Vishay High Power Products
Schottky Rectifier, 10 A
Base
cathode
2
TO-220AC
1
3
Cathode Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
10 A
35/45 V
15 mA at 125 °C
FEATURES
• 150 °C T_J operation
• TO-220 package
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
I_FRM
V_RRM
T_C = 135 °C
I_FSM
t_p = 5 µs sine
V_F
10 Apk, T_J = 125 °C
T_J
Range
VALUES
10
20
35/45
1060
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
V_R
Maximum working peak reverse voltage V_RWM
MBR1035
35
MBR1045
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Peak repetitive forward current
I_FRM
Non-repetitive peak surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
T_C = 135 °C, rated V_R
10
Rated V_R, square wave, 20 kHz, T_C = 135 °C
Following any rated load condition
5 µs sine or 3 µs rect. pulse
and with rated V_RRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
20
1060
150
T_J = 25 °C, I_AS = 2 A, L = 4 mH
8
Current decaying linearly to zero in 1 µs
2
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
UNITS
A
A
mJ
A
Document Number: 93437
Revision: 22-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
1