MBR0530PBF Datasheet, PDF (1/5 Pages) International Rectifier – SCHOTTKY DIODE

MBR0530PbF
Vishay High Power Products
Schottky Diode, 0.5 A
SOD-123
1
(A)
2
(K)
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at 0.5 A at 25 °C
0.5 A
30 V
0.430 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
DC
t_p = 10 ms sine
0.5 Apk, T_J = 100 °C
Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
FEATURES
• Surface mountable
• Very low forward voltage drop
• Extremely fast switching
• Negligible switching losses
Pb-free
Available
RoHS*
COMPLIANT
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
This Schottky diode is ideally suited for low voltage,
high frequency operations, as freewheeling and polarity
protection. Small size of the package allows proper use in
application where compact size is critical, fitting also the
GSM and PCMCIA requirement.
VALUES
0.5
30
10
0.35
- 65 to 150
UNITS
A
V
A
V
°C
MBR0530PbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward current
Maximum peak one cycle
non-repetitive surge current
at T_J = 25 °C
I_F
DC, T_L = 126 °C
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
VALUES
0.5
75
10
UNITS
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94282
Revision: 14-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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