M30L40C_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common-Cathode Schottky Rectifier

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M30L40C
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
PIN 1
PIN 3
3
2
1
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
2 x 15 A
40 V
E_AS
20 mJ
I_FSM
280 A
V_F at I_F = 15 A
T_J max.
Package
Diode variations
0.413 V
150 °C
TO-220AB
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig.1)
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Peak repetitive reverse current per diode at t_p = 2 μs, 1 kHz
Non-repetitive avalanche energy at 25 °C, I_AS = 2 A, L = 10 mH per diode
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
SYMBOL
V_RRM
I_F(AV)
I_FSM
I_RRM
E_AS
dV/dt
T_J, T_STG
M30L40C
40
30
15
280
1.0
20
10 000
-65 to +150
UNIT
V
A
A
A
mJ
V/μs
°C
Revision: 15-Aug-15
1
Document Number: 89012
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000