M30HXXCT_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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M30HxxCT, MF30HxxCT
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
M30H90CT
M30H100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
MF30H90CT
MF30H100CT
123
PIN 1
PIN 2
PIN 3
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_J max.
Package
15 A x 2
90 V to 100 V
275 A
0.67 V
5.0 μA
175 °C
TO-220AB, ITO-220AB
Diode variations
Dual Common Cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB
Molding compound meets UL 94 V-0 flammability rating 
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current 
(fig.1)
total device
per diode
V_RRM
V_RWM
V_DC
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Peak repetitive reverse surge current per diode 
at t_p = 2.0 μs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
I_RRM
dV/dt
T_J, T_STG
V_AC
M30H90CT
M30H100CT
90
100
90
100
90
100
30
15
275
1.0
10 000
-65 to +175
1500
UNIT
V
A
V/μs
°C
V
Revision: 22-Jan-15
1
Document Number: 87737
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000