M2035S-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Schottky Barrier Rectifier

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M2035S-E3, M2045S-E3
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AB
3
2
1
1
2
3
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
20 A
V_RRM
35 V, 45 V
I_FSM
V_F at I_F = 20 A
200 A
0.55 V
T_J max.
150 °C
Package
TO-220AB
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig.1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Peak repetitive reverse current per leg at t_p = 2 μs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_RRM
dV/dt
T_J, T_STG
M2035S
M2045S
35
45
20
200
2.0
10 000
- 55 to + 150
UNIT
V
A
A
A
V/μs
°C
Revision: 28-Nov-13
1
Document Number: 88953
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000