LS485S Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes
LS485S
Vishay Telefunken
Applications
General purposes
96 12009
Absolute Maximum Ratings
T_j = 25_C
Parameter
Peak reverse voltage
Reverse voltage
Forward current
Forward peak current
Peak forward surge current
Junction temperature
Storage temperature range
Test Conditions
I_R= 100mA
f=50Hz
t_p=1ms
Type
Symbol Value
Unit
V_RRM
200
V
V_R
180
V
I_F
200
mA
I_FM
500
mA
I_FSM
4
A
T_j
150
°C
T_stg –55...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Electrical Characteristics
Symbol
Value
Unit
R_thJA
500
K/W
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Test Conditions
I_F=10mA, T_j= –40°C
I_F=10mA, T_j= 25°C
I_F=10mA, T_j= 125°C
V_R= 10V, T_j= –40°C
V_R= 10V, T_j= 25°C
V_R= 10V, T_j=125°C
I_R=100mA, T_j= –40°C
I_R=100mA, T_j= 25°C
I_R=100mA, T_j= 125°C
V_R=0V, f=1MHz
Type
Symbol Min Typ Max Unit
V_F
V_F
V_F
I_R
I_R
I_R
V_(BR) 200
V_(BR) 200
V_(BR) 200
C_D
1.2 V
1.1 V
1.1 V
25 nA
25 nA
150 nA
V
V
V
5 pF
Document Number 85565
Rev. 1, 09-Apr-99
www.vishay.de • FaxBack [phone]
1 (3)