LL4151 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes
Features
D Electrical data identical with the device 1N4151
LL4151
Vishay Telefunken
Applications
Extreme fast switches
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
t_p=1ms
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
V_R=0
Junction temperature
Storage temperature range
94 9371
Type
Symbol Value
Unit
V_RRM
75
V
V_R
50
V
I_FSM
2
A
I_FRM
500
mA
I_F
300
mA
I_FAV
150
mA
P_V
500
mW
T_j
175
°C
T_stg –65...+175 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
on PC board 50mmx50mmx1.6mm
Symbol
Value
Unit
R_thJA
500
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery
time
I_F=50mA
V_R=50V
m ^{VR=50V, Tj=150°C}
I_R=5 A, t_p/T=0.01, t_p=0.3ms
V_R=0, f=1MHz, V_HF=50mV
W ^{IF=IR=10mA, iR=1mA}
I_F=10mA, V_R=6V, i_R=0.1xI_R, R_L=100
Type Symbol Min Typ Max Unit
V_F
0.88 1 V
I_R
I_R
50 nA
50 mA
V_(BR) 75
V
C_D
2 pF
t_rr
4 ns
t_rr
2 ns
Document Number 85559
Rev. 3, 01-Apr-99
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