KBP04M-E4 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier

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KBPxxM, 3N2xx
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
−
~
~
+
Case Style KBPM
+~~−
PRIMARY CHARACTERISTICS
Package
KBPM
I_F(AV)
1.5 A
V_RRM
50 V to 1000 V
I_FSM
60 A
I_R
5 μA
V_F at I_F = 1.0 A
1.0 V
T_J max.
150 °C
Diode variations
In-Line
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M
SYMBOL
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum repetitive peak reverse voltage ⁽¹⁾ V_RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage ⁽¹⁾
V_RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage ⁽¹⁾
V_DC
50
100
200
400
600
800
1000
V
Maximum average forward output rectified
current at T_A = 40 °C
I_F(AV)
1.5
A
Peak forward surge current
single half sine-wave ⁽¹⁾
T_A = 25 °C
T_A = 150 °C
I_FSM
60
A
40
Rating for fusing (t < 8.3 ms)
I²t
10
A²s
Operating junction and storage
temperature range ⁽¹⁾
T_J, T_STG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
KBP005M
KBP01M
KBP02M
KBP04M
KBP06M
KBP08M
KBP10M
UNIT
Maximum instantaneous
1.0 A
forward voltage drop per
V_F
diode ⁽¹⁾
1.57 A
1.0
V
1.3
Maximum DC reverse
T_J = 25 °C
current at rated DC blocking
I_R
voltage per diode ⁽¹⁾
T_J = 125 °C
5.0
μA
500
Typical junction
capacitance per diode
4.0 V, 1 MHz
C_J
15
pF
Note
(1) _{JEDEC registered values}
Revision: 08-Jul-13
1
Document Number: 88531
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000