IRLZ24S Datasheet, PDF (1/10 Pages) Vishay Siliconix – Power MOSFET

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
60
V_GS = 5 V
0.10
Q_g (Max.) (nC)
18
Q_gs (nC)
4.5
Q_gd (nC)
12
Configuration
Single
D
I²PAK (TO-262)
D²PAK (TO-263)
G
DS
G
D
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D²PAK (TO-263)
SiHLZ24S-GE3
-
-
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
• R_{DS (on)} Specified at V_GS = 4 V and 5 V
• 175°C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ24L, SiHLZ24L) is available
for low-profile application.
I²PAK (TO-262)
SiHLZ24L-GE3
IRLZ24LPbF
SiHLZ24L-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 5 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 444 μH, R_g = 25 , I_AS = 17 A (see fig. 12).
c. I_SD  17 A, dI/dt  140 A/μs, V_DD  V_DS, T_J  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material)
LIMIT
60
± 10
17
12
68
0.40
0.025
110
60
3.7
4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90416
S11-1044-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000