IRLZ14S Datasheet, PDF (1/8 Pages) Vishay Siliconix – Power MOSFET

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 5 V
8.4
3.5
6.0
Single
I²PAK (TO-262)
D²PAK (TO-263)
0.20
D
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Surface Mount (IRLZ14S/SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L/SiHLZ14L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient reliable device for use in a wide
variety of applications.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D²PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRLZ44L/SiHLZ44L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRLZ14SPbF
SiHLZ14S-E3
SnPb
IRLZ14S
SiHLZ14S
Note
a. See device orientation.
D²PAK (TO-263)
IRLZ14STRRPbF^a
SiHLZ14STR-E3^a
IRLZ14TRR^a
SiHLZ14TR^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage^e
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 5 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
T_A = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 790 µH, R_G = 25 Ω, I_AS = 10 A (see fig. 12).
c. I_SD ≤ 10 A, dI/dt ≤ 90 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRLZ14/SiHLZ14 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90414
S-Pending-Rev. A, 21-Jul-08
WORK-IN-PROGRESS
I²PAK (TO-262)
-
-
IRLZ14L
SiHLZ14L
LIMIT
60
± 10
10
7.2
40
0.29
68
43
3.7
4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
www.vishay.com
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