IRLR120 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
100
V_GS = 5.0 V
12
3.0
7.1
Single
0.27
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR120/SiHLR120)
• Straight Lead (IRLU120/SiHLU120)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRLR120PbF
SiHLR120-E3
SnPb
IRLR120
SiHLR120
Note
a. See device orientation.
DPAK (TO-252)
IRLR120TRLPbF^a
SiHLR120TL-E3^a
IRLR120TRL^a
SiHLR120TL^a
DPAK (TO-252)
IRLR120TRPbF^a
SiHLR120T-E3^a
IRLR120TR^a
SiHLR120T^a
DPAK (TO-252)
IRLR120TRRPbF^a
SiHLR120TR-E3^a
-
-
IPAK (TO-251)
IRLU120PbF
SiHLU120-E3
-
-
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 5.3 mH, R_G = 25 Ω, I_AS = 7.7 A (see fig. 12).
c. I_SD ≤ 9.2 A, dI/dt ≤ 110 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
100
± 10
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91324
S-81292-Rev. A, 16-Jun-08
www.vishay.com
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