IRLR110 Datasheet, PDF (1/8 Pages) International Rectifier – POWER MOSFET

IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
100
V_GS = 5.0 V
6.1
2.0
3.3
Single
0.54
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR110/SiHLR110)
• Straight Lead (IRLU110/SiHLU110)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRLR110PbF
SiHLR110-E3
SnPb
IRLR110
SiHLR110
Note
a. See device orientation.
DPAK (TO-252)
IRLR110TRLPbF^a
SiHLR110TL-E3^a
IRLR110TRL^a
SiHLR110TL^a
DPAK (TO-252)
-
-
IRLR110TR^a
SiHLR110T^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 8.1 mH, R_G = 25 Ω, I_AS = 4.3 A (see fig. 12).
c. I_SD ≤ 5.6 A, dI/dt ≤ 140 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
IPAK (TO-251)
IRLU110PbF
SiHLU110-E3
IRLU110
SiHLU110
LIMIT
100
± 10
4.3
2.7
17
0.20
0.020
100
4.3
2.5
25
2.5
5.5
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91323
S-81304-Rev. A, 16-Jun-08
www.vishay.com
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