IRLD110 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET POWER MOSFET

Power MOSFET
IRLD110, SiHLD110
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
100
V_GS = 5.0 V
6.1
2.6
3.3
Single
0.54
D
HEXDIP
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Logic-Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• 175 °C Operating Temperature
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HEXDIP
IRLD110PbF
SiHLD110-E3
IRLD110
SiHLD110
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
V_GS
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Avalanche current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 183 mH, R_G = 25 Ω, I_AS = 2.0 A (see fig. 12).
c. I_SD ≤ 5.6 A, dI/dt ≤ 75 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91309
S-81378-Rev. A, 07-Jul-08
LIMIT
100
± 10
1.0
0.70
8.0
0.0083
490
1.0
0.13
1.3
5.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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