IRL640S Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET-R POWER MOSFET

www.vishay.com
IRL640S, SiHL640S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
200
V_GS = 5 V
66
9.0
38
Single
0.18
D
D²PAK (TO-263)
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Logic-level gate drive
• R_DS(on) specified at V_GS = 4 V and 5 V
• Fast switching
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
GD
S
G
S
N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D²PAK (TO-263)
SiHL640S-GE3
IRL640SPbF
SiHL640S-E3
D²PAK (TO-263)
SiHL640STRL-GE3 ^a
IRL640STRLPbF ^a
SiHL640STL-E3 ^a
D²PAK (TO-263)
SiHL640STRR-GE3 ^a
IRL640STRRPbF ^a
SiHL640STR-E3 ^a
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^a
Linear Derating Factor
V_DS
V_GS
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB mount) ^e
Single Pulse Avalanche Energy ^b
Repetitive Avalanche Current ^a
Repetitive Avalanche Energy ^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) ^e
Peak Diode Recovery dV/dt ^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Temperature ^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 3.0 mH, R_g = 25 , I_AS = 17 A (see fig. 12).
c. I_SD  17 A, dI/dt  150 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
LIMIT
200
± 10
17
11
68
1.0
0.025
580
10
13
125
3.1
5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S16-0763-Rev. D, 02-May-16
1
Document Number: 91306
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000