IRL630 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)

Power MOSFET
IRL630, SiHL630
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
200 V
V_GS = 5 V
40
5.5
24
Single
0.40
D
TO-220
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• 150 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRL630PbF
SiHL630-E3
IRL630
SiHL630
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_GS
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 4.6 µH, R_G = 25 Ω, I_AS = 9.0 A (see fig. 12).
c. I_SD ≤ 9.0 A, dV/dt ≤ 120 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91303
S-Pending-Rev. A, 17-Jul-08
WORK-IN-PROGRESS
LIMIT
± 10
9.0
5.7
36
0.59
250
9.0
7.4
74
5.0
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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