IRL620S Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

Power MOSFET
IRL620S, SiHL620S
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
200
V_GS = 10 V
0.80
Q_g (Max.) (nC)
16
Q_gs (nC)
2.9
Q_gd (nC)
9.6
Configuration
Single
D
D²PAK (TO-263)
GD
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on- resistance in any existing surface mount
package. The D²PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free IRL620STRLPbF
Note
a. See device orientation.
D²PAK (TO-263)
SiHL620S-GE3
IRL620SPbF
SiHL620S-E3
D²PAK (TO-263)
SiHL620STRL-GE3^a
IRL620STRLPbF^a
SiHL620STL-E3^a
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 5 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.
c.
VI_SDDD=55.20
V,
A,
dsIt/adrttin^g95TJA=/μ2s5,
°C,
V_DD
L

= 6.9
V_DS,
Tm_J ^H^,1R5g0=°C2.5
,
I_AS
=
5.2
A
(see
fig.
12).
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
200
± 10
5.2
3.3
21
0.40
0.025
125
5.2
5.0
50
3.1
5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91302
S11-1054-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000