IRL520S Datasheet, PDF (1/8 Pages) Vishay Siliconix – Power MOSFET

Power MOSFET
IRL520S, SiHL520S
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
100
V_GS = 5 V
12
3.0
7.1
Single
0.27
D
D²PAK (TO-263)
G
GD
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
SnPb
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• R_{DS (on)} Specified at V_GS = 4 V and 5 V
• 175°C Operating Temperature
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
D²PAK (TO-263)
IRL520S
SiHL520S
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
V_DS
V_GS
V_GS at 5 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 3.0 mH, R_G = 25 Ω, I_AS = 9.2 A (see fig. 12).
c. I_SD ≤ 9.2 A, dI/dt ≤ 110 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
100
± 10
9.2
6.5
36
0.40
0.025
170
9.2
6.0
60
3.7
5.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 90382
S-Pending-Rev. A, 14-Jan-09
WORK-IN-PROGRESS
www.vishay.com
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