IRFZ48S_11 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Power MOSFET

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
110
29
36
Single
I²PAK (TO-262)
D²PAK (TO-263)
0.018
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ48S, SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L, SiHFZ48L) is available
for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D²PAK (TO-263)
SiHFZ48S-GE3
IRFZ48SPbF
SiHFZ48S-E3
I²PAK (TO-262)
-
IRFZ48LPbF
SiHFZ48L-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^f
Pulsed Drain Current^{a, e}
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^{b, e}
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
T_C = 25 °C
T_A = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, Starting T_J = 25 °C, L = 22 μH, R_g = 25 , I_AS = 72 A (see fig. 12).
c. I_SD  72 A, dI/dt  200 A/μs, V_DD  V_DS, T_J  175 °C.
d. 1.6 mm from case.
e. Uses IRFZ48, SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
LIMIT
60
± 20
50
50
290
1.3
100
190
3.7
4.5
- 55 to + 175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90377
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000