IRFZ48S Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
110
29
36
Single
0.018
D
I²PAK (TO-262)
D²PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Surface Mount (IRFZ48S/SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L) ^Available
• 175 °C Operating Temperature
RoHS*
• Fast Switching
COMPLIANT
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to 2
W in a typical surface mount application.
The through-hole version (IRFZ48L/SiHFZ48L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRFZ48SPbF
SiHFZ48S-E3
SnPb
IRFZ48S
SiHFZ48S
Note
a. See device orientation.
D²PAK (TO-263)
-
-
IRFZ48STRL
SiHFZ48STL
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^f
Pulsed Drain Current^{a, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
E_AS
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
T_C = 25 °C
T_A = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, Starting T_J = 25 °C, L = 22 µH, R_G = 25 Ω, I_AS = 72 A (see fig. 12).
c. I_SD ≤ 72 A, dI/dt ≤ 200 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ48/SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90377
S-Pending-Rev. A, 23-Jul-08
WORK-IN-PROGRESS
I²PAK (TO-262)
IRFZ48LPbF
SiHFZ48L-E3
-
-
LIMIT
60
± 20
50
50
290
1.3
100
190
3.7
4.5
- 55 to + 175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
www.vishay.com
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