IRFZ48RS Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
110
29
36
Single
0.018
D
I²PAK (TO-262)
D²PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
D²PAK (TO-263)
IRFZ48RSPbF
SiHFZ48RS-E3
IRFZ48RS
SiHFZ48RS
FEATURES
• Advanced Process Technology
• Dynamic dV/dt
• 175 °C Operating Temperature
• Fast Switching
Available
RoHS*
COMPLIANT
• Fully Avalanche Rated
• Drop in Replacement of the IRFZ48/SiHFZ48 for
Linear/Audio Applications
• Lead (Pb)-free Available
DESCRIPTION
Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2 W in a typical surface mount application.
I²PAK (TO-262)
IRFZ48RLPbF
SiHFZ48RL-E3
-
-
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^e
Pulsed Drain Current^{a, e}
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
E_AS
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
60
± 20
50
50
290
1.3
100
190
4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
WORK-IN-PROGRESS
www.vishay.com
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