IRFZ44S Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
67
18
25
Single
0.028
D
I²PAK (TO-262)
D²PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Surface Mount (IRFZ44S, SiHFZ44S)
• Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extermely efficient reliabel deviece for use in a wide
variety of applications.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D²PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ44L/SiHFZ44L) is available
for low profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRFZ44SPbF
SiHFZ44S-E3
SnPb
Note
IRFZ44S
SiHFZ44S
a. See device orientation.
D²PAK (TO-263)
IRFZ44STRRPbF^a
SiHFZ44STR-E3^a
IRFZ44STRR^a
SiHFZ44STR^a
D²PAK (TO-263)
IRFZ44STRLPbF^a
SiHFZ44STL-E3^a
IRFZ44STRL^a
SiHFZ44STL^a
I²PAK (TO-262)
IRFZ44LPbF
SiHFZ44L-E3
IRFZ44L
SiHFZ44L
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage^f
Gate-Source Voltage^f
Continuous Drain Current^e
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
SYMBOL
V_DS
V_GS
I_D
I_DM
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, f}
T_A = 25 °C
T_C = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature^d)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V; starting T_J = 25 °C, L = 44 µH, R_G = 25 Ω, I_AS = 51 A (see fig. 12).
c. I_SD ≤ 51 A, dI/dt ≤ 250 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
e. Calculated continuous current based on maximum allowable junction temperature.
f. Uses IRFZ44/SiHFZ44 data and test conditions.
LIMIT
60
± 20
50
36
200
1.0
100
3.7
150
4.5
- 55 to + 175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91293
S-Pending-Rev. A, 23-Jul-08
WORK-IN-PROGRESS
www.vishay.com
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