IRFZ34S Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
46
11
22
Single
0.050
D
I²PAK (TO-262)
D²PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L/SiHFZ34L)
• 175 °C Operating Temperature
Available
RoHS*
COMPLIANT
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D²PAKis a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to 2
W in a typical surface mount application.
The through-hole version (IRFZ34L/SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRFZ34SPbF
SiHFZ34S-E3
SnPb
IRFZ34S
SiHFZ34S
Note
a. See device orientation.
D²PAK (TO-263)
IRFZ34STRRPbF^a
SiHFZ34STRPbF^a
IRFZ34STRR^a
SiHFZ34STR^a
D²PAK (TO-263)
IRFZ34STRLPbF^a
SiHFZ34STLPbF^a
IRFZ34STRL^a
SiHFZ34STL^a
I²PAK (TO-263)
IRFZ34LPbF
SiHFZ34L-E3
IRFZ34L
SiHFZ34L
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
T_A = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, Starting T_J = 25 °C, L = 260 µH, R_G = 25 Ω, I_AS = 30 A (see fig. 12).
c. I_SD ≤ 30 A, dI/dt ≤ 200 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34/SiHFZ34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
60
± 20
30
21
120
0.59
200
88
3.7
4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
WORK-IN-PROGRESS
www.vishay.com
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