IRFS9N60A Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET

IRFS9N60A, SiHFS9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
600
V_GS = 10 V
49
0.75
13
20
Single
D
D²PAK (TO-263)
G
GD
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRFS9N60APbF
SiHFS9N60A-E3
SnPb
IRFS9N60A
SiHFS9N60A
Note
a. See device orientation.
FEATURES
• Low Gate Charge Q_g results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
D²PAK (TO-263)
IRFS9N60ATRRPbF^a
SiHFS9N60ATR-E3^a
IRFS9N60ATRR^a
SiHFS9N60ATR^a
D²PAK (TO-263)
IRFS9N60ATRLPbF^a
SiHFS9N60ATL-E3^a
IRFS9N60ATRL^a
SiHFS9N60ATL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 6.8 mH, R_G = 25 Ω, I_AS = 9.2 A (see fig. 12).
c. I_SD ≤ 9.2 A, dI/dt ≤ 50 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91287
S-Pending-Rev. A, 22-Jul-08
WORK-IN-PROGRESS
LIMIT
600
± 30
9.2
5.8
37
1.3
290
9.2
17
170
5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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