IRFR024 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET POWER MOSFET

IRFR024, IRFU024, SiHFR024, SiHFU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
25
5.8
11
Single
0.10
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRFR024/SiHFR024)
• Straight Lead (IRFU024/SiHFU024)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR024PbF
SiHFR024-E3
SnPb
IRFR024
SiHFR024
Note
a. See device orientation.
DPAK (TO-252)
IRFR024TRPbF^a
SiHFR024T-E3^a
IRFR024TR^a
SiHFR024T^a
DPAK (TO-252)
-
-
IRFR024TRL^a
SiHFR024TL^a
IPAK (TO-251)
IRFU024PbF
SiHFU024-E3
IRFU024
SiHFU024
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
I_DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
E_AS
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
P_D
dV/dt
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
60
± 20
14
9.0
56
0.33
0.020
91
42
2.5
5.5
UNIT
V
A
W/°C
mJ
W
V/ns
Document Number: 91264
S-Pending-Rev. A, 17-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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